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SiC CRUCIBLE, SiC SINTERED BODY, AND METHOD OF PRODUCING SiC SINGLE CRYSTAL
SiC CRUCIBLE, SiC SINTERED BODY, AND METHOD OF PRODUCING SiC SINGLE CRYSTAL
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机译:SiC坩埚,SiC烧结体以及SiC单晶的制备方法
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摘要
In the present invention, in producing a SiC single crystal in accordance with a solution method, a crucible containing SiC as a main component and having an oxygen content of 100 ppm or less is used as the crucible to be used as a container for a Si-C solution. In another embodiment, a sintered body containing SiC as a main component and having an oxygen content of 100 ppm or less is placed in the crucible to be used as a container for a Si-C solution. The SiC crucible and SiC sintered body are obtained by molding and baking a SiC raw-material powder having an oxygen content of 2000 ppm or less. SiC, which is the main component of these, serves as a source for Si and C and allows Si and C to elute into the Si-C solution by heating.
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