PLASMA ENHANCED ATOMIC LAYER DEPOSITION (PEALD) OF SIN USING SILICON HYDROHALIDE PRECURSOR

摘要

To provide a method for forming a silicon nitride film.SOLUTION: According to some embodiments, silicon nitride may be deposited through, for example, plasma enhanced atomic layer deposition (ALD). One or more silicon nitride deposition cycles include a sequential plasma preprocessing stage of sequentially exposing a substrate to hydrogen plasma and then nitrogen plasma in the absence of the hydrogen plasma, and a deposition stage of exposing the substrate to a silicon precursor. According to some embodiments, a silicon hydrohalide precursor is used to deposit silicon nitride. A silicon nitride film may have high side-wall conformality, and according to some embodiments, the silicon nitride film may be thicker than at a bottom part of a side wall of a trench structure than at an upper part of the side wall. In a gap fill process, a gap and a seam can be reduced or removed through the silicon nitride deposition process.SELECTED DRAWING: Figure 2