CRYSTALLIZATION MONITORING METHOD, LASER ANNEALING APPARATUS, AND LASER ANNEALING METHOD

摘要

To provide a laser annealing apparatus which makes possible to grasp an electric property of a semiconductor thin film and to eliminate a trouble of a laser annealing treatment in a short time.SOLUTION: A crystallization monitoring method comprises the steps of computing a calculated film thickness value of respective constituent films of a laminate structure in a non-processing region exposed to no laser beam, which is located close to a processing region to perform annealing, and computing a level of crystallization in the processing region by fitting of a second spectrum measurement value of the processing region and a second spectrum calculated value computed from the calculated film thickness value, thereby adjusting a laser energy of a laser beam to be applied to a TFT substrate to perform laser annealing next time.SELECTED DRAWING: Figure 1