Crystallization monitoring method, laser annealing device, and laser annealing method

摘要

The film thickness calculation value of each constituent film of the laminated structure of the unprocessed region in which the laser light close to the processing region to be annealed is not irradiated is calculated, and the second spectral spectrum calculated from the second spectral spectrum measurement value and the film thickness calculation value of the processing region By fitting with the calculated value, the crystallization level of the processing region is calculated, and the laser energy of the laser light irradiated to the TFT substrate to be subjected to the laser annealing treatment is adjusted next time.