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ETCHANT FOR SELECTIVE REMOVAL OF SILICON RELATIVE TO SILICON-GERMANIUM ALLOY FROM SILICON-GERMANIUM/SILICON STACK DURING MANUFACTURING OF SEMICONDUCTOR DEVICE
ETCHANT FOR SELECTIVE REMOVAL OF SILICON RELATIVE TO SILICON-GERMANIUM ALLOY FROM SILICON-GERMANIUM/SILICON STACK DURING MANUFACTURING OF SEMICONDUCTOR DEVICE
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机译:在制造半导体器件过程中从硅锗/硅叠层中选择性去除硅硅锗合金中的硅的粘合剂
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摘要
To provide an etchant suitable for selectively removing silicon relative to silicon-germanium from a microelectronic device.SOLUTION: Provided are an etching composition which includes water, at least one of a quaternary ammonium hydroxide compound and an amine compound, and a water miscible solvent, and optionally includes a surfactant and a corrosion inhibitor, and which is suitable for selectively removing silicon relative to silicon-germanium from a microelectronic device; and a method of using the etching composition for selective removal.SELECTED DRAWING: Figure 1
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