Characterization of Selectively Deposited very-heavily Boron-doped Silicon-Germanium Alloys for Ultra-Shallow Junctions and Advanced Contacts

摘要

This paper presents material and electrical characterization of selectively deposited thin (approx 30 nm) very heavily B-doped Si_(1-x-y)Ge_xB_y (x > 0.5) films grown on Si (100).The films were grown at 500 deg C using disilane (Si_2H_6),germane (GeH_4,diborane (B_2H_6) and hydrogen (H_2) in an ultra-high vacuum rapid thermal chemical vapor deposition (UHV-RTCVD) reactor.The films were analyzed for (a) (heir selectivity and morphology using AFM,(b) sheet resistance,mobility,dopant incorporation and activation using a Hall setup and (c) incorporated B-induced lattice contraction using X-ray diffraction.