An etching solution for selectively removing silicon from a silicon-germanium / silicon laminate to a silicon-germanium alloy during the manufacture of semiconductor devices.

摘要

To provide an etchant suitable for selectively removing silicon relative to silicon-germanium from a microelectronic device.SOLUTION: Provided are an etching composition which includes water, at least one of a quaternary ammonium hydroxide compound and an amine compound, and a water miscible solvent, and optionally includes a surfactant and a corrosion inhibitor, and which is suitable for selectively removing silicon relative to silicon-germanium from a microelectronic device; and a method of using the etching composition for selective removal.SELECTED DRAWING: Figure 1