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CRUCIBLE SUPPORT PEDESTAL, QUARTZ CRUCIBLE SUPPORT DEVICE, AND PRODUCTION METHOD OF SILICON SINGLE CRYSTAL

机译:坩埚支撑底座,石英坩埚支撑装置以及硅单晶的生产方法

摘要

To provide a crucible support pedestal capable of suppressing opening of a split graphite member top edge at a solidification time of silicon melt.SOLUTION: A crucible support pedestal 12 includes a fittable recess 122 fittable by a split graphite member 11. An opening edge 123 of the fittable recess 122 is constituted so that a contact part P1 with the split graphite member 11 is provided on a position higher than a surface of a solidified material M1 of silicon melt remaining in a quartz crucible 221 after growth of a silicon single crystal, and that force working on the split graphite member 11 following expansion at a solidification time of silicon melt works on a lower position than the contact part P1.SELECTED DRAWING: Figure 2
机译:为了提供一种坩埚支撑基座,其能够在硅熔体凝固时抑制裂开的石墨构件顶边缘的开口。解决方案:坩埚支撑基座12包括可通过裂开的石墨构件11装配的可装配凹槽122。可嵌合凹部122构成为,在比单晶硅生长后残留在石英坩埚221中的硅熔液的凝固硅材料M1的表面高的位置上,设有与分裂石墨部件11的抵接部P1。在硅熔体凝固时膨胀后作用在分裂石墨构件11上的力作用在比接触部分P1低的位置上。图2

著录项

  • 公开/公告号JP2019064864A

    专利类型

  • 公开/公告日2019-04-25

    原文格式PDF

  • 申请/专利权人 SUMCO CORP;

    申请/专利号JP20170191553

  • 发明设计人 MUNEZANE KENJI;

    申请日2017-09-29

  • 分类号C30B29/06;C30B15;

  • 国家 JP

  • 入库时间 2022-08-21 12:22:39

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