Silicon wafer heat treatment method and silicon wafer production method

摘要

The present invention is a silicon wafer heat-treatment method, whereby: a silicon wafer is introduced into a heat treatment furnace and heated to a temperature of 1000 to 1350°C; a first heat treatment is performed at the heated temperature for at least 30 minutes in a non-oxidizing gas atmosphere excluding nitrogen gas; and a second heat treatment is performed before the temperature starts to drop from the temperature at which the first heat treatment was performed or while the temperature is dropping from the temperature at which the first heat treatment was performed, a portion or all of the second heat treatment being performed with the heat treatment furnace being a nitrogen gas atmosphere or a mixed gas atmosphere of nitrogen gas and a non-oxidizing gas. Due to this configuration, provided is a silicon wafer heat-treatment method capable of controlling the density of BMD directly below the DZ layer to be at a high density of at least 1×109/cm3, without needing to perform a heat treatment for a long time at a high temperature, as in a process in which a BMD nucleus is formed via RTA and a BMD nucleus growth heat treatment is performed thereafter, for example.