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SiC epitaxial wafer, method of manufacturing the same, large pit defect detection method, defect identification method
SiC epitaxial wafer, method of manufacturing the same, large pit defect detection method, defect identification method
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机译:SiC外延晶片,其制造方法,大凹坑缺陷检测方法,缺陷识别方法
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摘要
A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H—SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 6.0 inclusions/cm2, and wherein a density of large pit defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.5 defects/cm2 or less.
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机译:SiC外延晶片,其中在具有倾斜角且基板碳夹杂物密度为0.1至6.0个夹杂物/ cm 2的4H-SiC单晶基板上形成SiC外延层,并且其中由基板碳引起的大凹坑缺陷的密度SiC外延层中所含的夹杂物为0.5个缺陷/ cm 2以下。
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