Oxide monocrystal growth crucible and oxide monocrystal growing method

摘要

PROBLEM TO BE SOLVED: To provide a crucible for oxide single crystal growth capable of easily obtaining a seeding condition after melting the raw material crystal of an oxide single crystal, such as sapphire in a crucible, and a method for growing the oxide single crystal.SOLUTION: A crucible 1 for oxide single crystal growth can store a seed crystal in the bottom of the crucible 1, charge a raw material crystal thereon and grow an oxide single crystal by a unidirectional solidification method. In the store area of the seed crystal, the upper end of the seed crystal is positioned at 10-20% of a crucible depth from the bottom of the crucible 1; a heat dissipation promotion part formed of a groove 10 and a fin 11 is provided in an outer peripheral portion of the crucible 1 of the store area; and the surface area of the heat radiation acceleration part is 1.2 or more times when having the groove 10 and the fin 11. The method for growing the oxide single crystal is constituted of a unidirectional solidification method using the crucible.SELECTED DRAWING: Figure 2