Manufacturing method for dual work-function metal gates

摘要

A method for manufacturing a semiconductor device includes providing a semiconductor substrate, forming a high dielectric constant (high-k) gate dielectric layer on the semiconductor substrate, the high-k gate dielectric layer including a nitrided surface that has been subjected to a nitriding treatment or an oxidized surface that has been subjected to an oxidizing treatment, forming a metal gate on the nitrided surface of the high-k gate dielectric layer to form an NMOS transistor, or forming a metal gate on the oxidized surface of the high-k gate dielectric layer to form a PMOS transistor.