INTERFACIAL CONTROL OF OXYGEN VACANCY DOPING AND ELECTRICAL CONDUCTION IN THIN FILM OXIDE HETEROSTRUCTURES

摘要

Systems and methods of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In₂O₃ films grown on ionically conducting Y₂O₃-stabilized ZrO₂ substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behavior is dependent on interface properties and is attained without cation doping or changes in the gas environment in contact with the sample.