首页> 外文期刊>The journal of physics and chemistry of solids >Enhancement of p-type conduction in Ag-doped ZnO thin films via Mg alloying: The role of oxygen vacancy
【24h】

Enhancement of p-type conduction in Ag-doped ZnO thin films via Mg alloying: The role of oxygen vacancy

机译:Mg合金增强Ag掺杂的ZnO薄膜中p型导电的作用:氧空位的作用

获取原文
获取原文并翻译 | 示例
           

摘要

ZnO, ZnMgO, Ag-doped ZnO (ZnO:Ag), and Ag-doped ZnMgO (ZnMgO:Ag) thin films have been prepared by pulsed laser deposition. All the films have a preferred orientation with the c-axis perpendicular to the substrates. Hall-effect measurements indicate that the ZnO:Ag film exhibits p-type conduction, but obviously worse than that of the ZnMgO:Ag film. A comparative study of p-type ZnO:Ag and ZnMgO:Ag films using photoluminescence and x-ray photoelectron spectroscopy measurements shows that the enhanced p-type conduction in ZnMgO:Ag film is closely related to the increase of the activation energy of the intrinsic donors and the suppression of charge-compensating oxygen-related defects after Mg incorporation.
机译:已经通过脉冲激光沉积制备了ZnO,ZnMgO,掺杂Ag的ZnO(ZnO:Ag)和掺杂Ag的ZnMgO(ZnMgO:Ag)薄膜。所有的膜都具有优选的取向,其c轴垂直于基材。霍尔效应测量表明,ZnO:Ag膜表现出p型导电性,但明显比ZnMgO:Ag膜差。使用光致发光和X射线光电子能谱测量对p型ZnO:Ag和ZnMgO:Ag膜进行的比较研究表明,ZnMgO:Ag膜中增强的p型传导与本征活化能的增加密切相关施主和抑制镁结合后的电荷补偿性氧相关缺陷。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号