首页> 外国专利> METHOD AND SYSTEM FOR MEASURING THERMAL STABILITY FACTOR OF MAGNETIC TUNNEL JUNCTION DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT, AND PRODUCTION MANAGEMENT METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT

METHOD AND SYSTEM FOR MEASURING THERMAL STABILITY FACTOR OF MAGNETIC TUNNEL JUNCTION DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT, AND PRODUCTION MANAGEMENT METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT

机译:磁隧道结装置,半导体集成电路的热稳定性因子的测量方法和系统以及半导体集成电路的生产管理方法

摘要

A method and a system for measuring the thermal stability factor of a magnetic tunnel junction device, a semiconductor integrated circuit, and a production management method for the semiconductor integrated circuit, capable of measuring the thermal stability factors of individual devices in a relatively short period of time and quickly performing quality control during material development and at a production site. A meter measures change in resistance value of an evaluation MTJ for a predetermined period while causing a predetermined current to flow into the evaluation MTJ maintained at a predetermined temperature. An analyzer calculates a time constant in which a low-resistance state is maintained and a time constant in which a high-resistance state is maintained from the measured change in resistance value. A thermal stability factor of the evaluation MTJ is calculated on the basis of the calculated time constants and the predetermined current flowing into the evaluation MTJ.
机译:用于测量磁性隧道结器件的热稳定性因数的方法和系统,半导体集成电路以及用于该半导体集成电路的生产管理方法,其能够在相对较短的时间内测量单个器件的热稳定性因数。在材料开发过程中和在生产现场进行时间和快速的质量控制。仪表在使预定电流流入保持在预定温度的评估MTJ的同时,在预定时段内测量评估MTJ的电阻值的变化。分析器根据所测得的电阻值的变化计算出维持低电阻状态的时间常数和维持高电阻状态的时间常数。基于计算出的时间常数和流入评估MTJ中的预定电流来计算评估MTJ的热稳定性因子。

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