NANOSHEET SUBSTRATE ISOLATED SOURCE/DRAIN EPITAXY BY COUNTER-DOPED BOTTOM EPITAXY
展开▼
机译:反向掺杂底基的NANOSHEET基板隔离的源/漏表位
展开▼
页面导航
摘要
著录项
相似文献
摘要
Parasitic transistor formation under a semiconductor containing nanosheet device is eliminated by forming a counter doped semiconductor layer on a physically exposed and recessed surface of a semiconductor substrate after formation of a nanosheet stack of alternating nanosheets of a sacrificial semiconductor material nanosheet and a semiconductor channel material nanosheet on a portion of the semiconductor substrate. The presence of the counter doped semiconductor layer isolates the source/drain regions from the semiconductor substrate and eliminates parasitic transistor formation.
展开▼