首页> 外国专利> REDUNDANT STORAGE OF ERROR CORRECTION CODE (ECC) CHECKBITS FOR VALIDATING PROPER OPERATION OF A STATIC RANDOM ACCESS MEMORY (SRAM)

REDUNDANT STORAGE OF ERROR CORRECTION CODE (ECC) CHECKBITS FOR VALIDATING PROPER OPERATION OF A STATIC RANDOM ACCESS MEMORY (SRAM)

机译:用于验证静态随机访问存储器(SRAM)正确操作的错误更正码(ECC)校验码的冗余存储

摘要

Application data and error correction code (ECC) checkbits associated with that application data are stored in a first memory. The ECC checkbits, but not the application data, are stored in a second memory. In response to a request to read the application from the first memory, the ECC checkbits from the first memory are also read and used to detect, and possibly correct, errors in the read application data. The ECC checkbits are further output from both the first and second memories for bit-by-bit comparison. In response to a failure of the bit-by-bit comparison, a signal indicating possible malfunction of one or the other or both of the first and second memories is generated.
机译:应用程序数据和与该应用程序数据关联的纠错码(ECC)校验位存储在第一存储器中。 ECC校验位(而不是应用程序数据)存储在第二个内存中。响应于从第一存储器读取应用程序的请求,来自第一存储器的ECC校验位也被读取并且用于检测并且可能校正读取的应用程序数据中的错误。进一步从第一和第二存储器两者输出ECC校验位,以进行逐位比较。响应于逐位比较的失败,产生指示第一和第二存储器中的一个或另一个或两者的可能故障的信号。

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