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SiC SINGLE CRYSTAL GROWTH APPARATUS AND GROWTH METHOD OF SiC SINGLE CRYSTAL

机译:SiC单晶生长装置及SiC单晶生长方法

摘要

A SiC single crystal growth apparatus of an embodiment includes a seed crystal installation part in which a seed crystal is installable at a position thereof which faces a raw material; a guide member which extends from a periphery of the seed crystal installation part toward the raw material and guides crystal growth performed inside the guide member; and a heat-insulating material which is movable along an extension direction of the guide member on the outside of the guide member.
机译:实施方式的SiC单晶生长装置包括:籽晶设置部,在该籽晶设置部中,在与原料相对的位置能够设置籽晶。引导构件,其从种晶设置部的周围朝向原料延伸,并且引导在该引导构件内进行的晶体生长。隔热材料,其可在引导部件的外部沿引导部件的延伸方向移动。

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