THREE-DIMENSIONAL MEMORY DEVICE CONTAINING CONFORMAL WRAP AROUND PHASE CHANGE MATERIAL AND METHOD OF MANUFACTURING THE SAME

摘要

A memory cell includes a first electrode which extends horizontally over a substrate, a layer stack containing a phase change memory material layer and a threshold switch material layer which wrap around the first electrode, and a second electrode which contains a first vertical portion and a second vertical portion which extend vertically over the substrate and are located on first and second lateral sides of the layer stack.