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Three-dimensional memory device containing conformal wrap around phase change material and method of manufacturing the same
Three-dimensional memory device containing conformal wrap around phase change material and method of manufacturing the same
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机译:包含保形包裹相变材料的三维存储器件及其制造方法
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摘要
A memory cell includes a first electrode which extends horizontally over a substrate, a layer stack containing a phase change memory material layer and a threshold switch material layer which wrap around the first electrode, and a second electrode which contains a first vertical portion and a second vertical portion which extend vertically over the substrate and are located on first and second lateral sides of the layer stack.
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