首页>
外国专利>
Resistive non-volatile memory and a method for sensing a memory cell in a resistive non-volatile memory
Resistive non-volatile memory and a method for sensing a memory cell in a resistive non-volatile memory
展开▼
机译:电阻式非易失性存储器和用于感测电阻式非易失性存储器中的存储单元的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A semiconductor device includes an array of memory cells, and a reference voltage generation circuit including a first set of reference memory cells coupled to a first bit line, a second set of reference memory cells coupled to a second bit line, a first capacitor having a first terminal coupled to the first bit line, and a second terminal, a second capacitor having a first terminal coupled to the second terminal of the first capacitor at a first node and a second terminal coupled to the second bit line, an amplifier including a first input selectively coupled to the first node and a second input coupled to an output of the amplifier that provides reference voltage used by sense amplifiers, and a third capacitor including a first terminal coupled to the output of the amplifier and a second terminal coupled to a first supply voltage.
展开▼