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Enhancing drive current and increasing device yield in N-type carbon nanotube field effect transistors
Enhancing drive current and increasing device yield in N-type carbon nanotube field effect transistors
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机译:在N型碳纳米管场效应晶体管中增加驱动电流并提高器件良率
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摘要
Embodiments of the invention are directed to methods and resulting structures for enhancing drive current and increasing device yield in n-type carbon nanotube field effect transistors (CNT FETs) with scaled contacts using a wetting layer. In some embodiments of the invention, a nanotube is formed over a surface of a substrate. An insulating layer is formed over the nanotube such that end portions of the nanotube are exposed. A low work function metal is formed over the end portions of the nanotube and a wetting layer is formed between the low work function metal and the nanotube.
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