One-step grown suspended n-type semiconducting single wall carbon nanotube field effect transistors with carbon nanotube electrodes

摘要

The authors report on the in situ formation of n-type ferromagnetic single wall carbon nanotube field effect transistors for the first time using a rapid heating process with a continuous flow of H_2 gas under a vacuum of millitorr and their electromagnetic transport properties. The suspended n-type single wall carbon nanotube (SWNT) bridge including nanosized Fe catalyst impurities also shows gate controlled magnetic field dependent field effect behavior. The interesting features of these devices can be understood qualitatively based on the influence of the nonoxidant interface and nano Fe residing at the growth site of the SWNT bridge.