SYNTHETIC ANTIFERROMAGNETIC LAYER, MAGNETIC TUNNEL JUNCTION AND SPINTRONIC DEVICE USING SAID SYNTHETIC ANTIFERROMAGNETIC LAYER

摘要

A synthetic antiferromagnetic layer includes a first ferromagnetic layer containing an amorphizing element, the first ferromagnetic layer having a first structural symmetry; a second ferromagnetic layer having a second structural symmetry; wherein the first and the second ferromagnetic layers are antiferromagnetically coupled by a trifunctional non-magnetic multi-layered structure, the antiferromagnetic coupling being an RKKY coupling, the non-magnetic multi-layered structure including at least two non-magnetic layers, the non-magnetic multilayered structure being at least partially nano-crystalline or amorphous in order to ensure a structural transition between the first ferromagnetic layer having the first structural symmetry and the second ferromagnetic layer having the second structural symmetry, the non-magnetic multilayered structure being adapted to absorb at least part of the amorphizing element out of the first ferromagnetic layer in contact with the non-magnetic multi-layered structure.