首页> 外文OA文献 >Tunnel Barrier Roughness Dependence of Magnetic Tunnel Junction with Synthetic Antiferromagnetic Pinned Layer

【2h】

Tunnel Barrier Roughness Dependence of Magnetic Tunnel Junction with Synthetic Antiferromagnetic Pinned Layer

机译：磁隧道结合隧道势垒粗糙度与合成反铁磁固定层的关系

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
J. Y. Hwang; S. S. Kim; J. R. Rhee;
展开▼
作者单位

展开▼
年度 2015
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Tunnel Barrier Roughness Dependence of Magnetic Tunnel Junction with Synthetic Antiferromagnetic Pinned Layer [J] . J.Y. Hwang, S. S. Kim, J. R. Rhee Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2007,第2期

机译：合成反铁磁固定层的磁性隧道结的隧道势垒粗糙度依赖性
2. Effect of coupling ability between a synthetic antiferromagnetic layer and pinned layer on a bridging layer of Ta, Ti, and Pt in perpendicular-magnetic tunnel junctions [J] . Lee Du-Yeong, Shim Tae-Hun, Park Jea-Gun Nanotechnology . 2016,第29期

机译：垂直磁隧道结中Ta，Ti和Pt桥接层上合成反铁磁层与固定层之间耦合能力的影响
3. Perpendicular magnetic tunnel junctions with synthetic antiferromagnetic pinned layers based on [Co/Pd] multilayers [J] . Yao-Jen Chang, A. Canizo-Cabrera, Valentin Garcia-Vazquez, Journal of Applied Physics . 2013,第17pta2期

机译：具有基于[Co / Pd]多层的合成反铁磁固定层的垂直磁隧道结
4. Tunnel Barrier Roughness Dependence of Magnetic Tunnel Junction with Synthetic Antiferromagnetic Pinned Layer [C] . J. Y. Hwang, S. S. Kim, J. R. Rhee China International Conference on Nanoscience and Technology . 2007

机译：磁隧道结与合成反铁磁固定层的隧道屏障粗糙度依赖性
5. Perpendicular Magnetic Tunnel Junctions with MgO Tunnel Barrier [D] . Almasi, Hamid. 2017

机译：具有MgO隧道势垒的垂直磁性隧道结
6. Effect of MgO Underlying Layer on the Growth of GaOx Tunnel Barrier in Epitaxial Fe/GaOx/(MgO)/Fe Magnetic Tunnel Junction Structure [O] . Sai Krishna Narayananellore, Naoki Doko, Norihiro Matsuo, 2017

机译：MgO下层对外延Fe / GaOx /（MgO）/ Fe磁性隧道结结构中GaOx隧道势垒生长的影响
7. Magnetic stability under magnetic cycling of MgO-based magnetic tunneling junctions with an exchange-biased synthetic antiferromagnetic pinned layer [O] . Qiang Hao, Cameron Reid, Gang Xiao, 2016

机译：具有交换偏置的合成反铁磁固定层的mgO基磁隧道结的磁循环下的磁稳定性

Tunnel Barrier Roughness Dependence of Magnetic Tunnel Junction with Synthetic Antiferromagnetic Pinned Layer

著录项

引文网络

相似文献

相关主题

期刊订阅