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METHOD OF DETERMINING AN OVERLAY ERROR, METHOD FOR MANUFACTURING A MULTILAYER SEMICONDUCTOR DEVICE, ATOMIC FORCE MICROSCOPY DEVICE, LITHOGRAPHIC SYSTEM AND SEMICONDUCTOR DEVICE
METHOD OF DETERMINING AN OVERLAY ERROR, METHOD FOR MANUFACTURING A MULTILAYER SEMICONDUCTOR DEVICE, ATOMIC FORCE MICROSCOPY DEVICE, LITHOGRAPHIC SYSTEM AND SEMICONDUCTOR DEVICE
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机译:确定覆盖误差的方法,制造多层半导体器件的方法,原子力显微镜器件,光刻系统和半导体器件
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摘要
Method of determining an overlay error between device layers of a multilayer semiconductor device using an atomic force microscopy system, wherein the semiconductor device comprises a stack of device layers comprising a first patterned layer and a second patterned layer, and wherein the atomic force microscopy system comprises a probe tip, wherein the method comprises: moving the probe tip and the semiconductor device relative to each other for scanning of the surface; and monitoring motion of the probe tip with tip position detector during said scanning for obtaining an output signal; during said scanning, applying a first acoustic input signal to at least one of the probe or the semiconductor device; analyzing the output signal for mapping at least subsurface nanostructures below the surface of the semiconductor device; and determining the overlay error between the first patterned layer and the second patterned layer based on the analysis.
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