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Black Phosphorus Crystal Having High Photoelectric Response Rate, Two-Dimensional Black Phosphorus PN Junction, and Preparation Method and Use Thereof

机译:具有高光电响应率的二维黑色磷PN结的黑色磷晶体及其制备方法和用途

摘要

A black phosphorus crystal having a high photoelectric response rate, a two-dimensional black phosphorus PN junction, and preparation method and use thereof. The black phosphorus crystal having a high photoelectric response rate is a single crystal with a spatial point group Cmca (No. 64), cell parameters a=3.2-3.4 Å, b=10.4-10.6 Å, c=4.3-4.5 Å, and an interlayer spacing of 4-6 Å, and is characterized by a high photoelectric response rate, an adjustable semiconductor type, and the like. Its preparation method is simple with a mild condition, a high yield, a low cost, and less pollution. The two-dimensional black phosphorus PN junction comprises a two-dimensional black phosphorus film, a first area of the film forming an n-type semiconductor by n-type doping, a second area of the film is maintained as a p-type semiconductor, and the first area is adjacent to the second area, to enable the n-type semiconductor to be combined with the p-type semiconductor to form the PN junction. The two-dimensional black phosphorus PN junction has properties, such as a unidirectional conductivity, or a special photovoltaic effect. The preparation method is simple, and efficient with a good repeatability, and is compatible with a conventional semiconductor technology. The black phosphorus crystal and the two-dimensional black phosphorus PN junction according to the disclosure have extensive application prospects in photoelectric and electronic fields.
机译:具有高光电响应率的黑磷晶体,二维黑磷PN结及其制备方法和用途。具有高光电响应率的黑磷晶体是具有空间点群Cmca(No. 64),晶胞参数a = 3.2-3.4,b = 10.4-10.6,c = 4.3-4.5,层间距为4-6-6,并且具有高光电响应率,可调半导体类型等特征。其制备方法简单,条件温和,收率高,成本低,污染少。二维黑磷PN结包括二维黑磷膜,该膜的第一区域通过n型掺杂形成n型半导体,该膜的第二区域保持为p型半导体,第一区域与第二区域相邻,以使n型半导体与p型半导体结合形成PN结。二维黑磷PN结具有诸如单向导电性或特殊的光伏效应等特性。该制备方法简单,有效,重复性好,并且与常规半导体技术兼容。本发明的黑磷晶体和二维黑磷PN结在光电和电子领域具有广阔的应用前景。

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