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FIELD-EFFECT TRANSISTORS WITH FINS HAVING INDEPENDENTLY-DIMENSIONED SECTIONS
FIELD-EFFECT TRANSISTORS WITH FINS HAVING INDEPENDENTLY-DIMENSIONED SECTIONS
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机译:具有独立尺寸截面的带鳍的场效应晶体管
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摘要
Methods of forming a structure for a fin-type field-effect transistor and structures for a fin-type field-effect transistor. A plurality of sacrificial layers are formed on a dielectric layer. An opening is formed that includes a first section that extends through the sacrificial layers and a second section that extends through the dielectric layer. A semiconductor material is epitaxially grown inside the opening to form a fin. The first section of the opening has a first width dimension, and the second section of the opening has a second width dimension that is less than the first width dimension.
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