TICN Having Reduced Growth Defects by Means of HIPIMS

摘要

The invention relates to method for applying a coating having at least one TiCN layer to a surface of a substrate to be coated by means of HiPIMS, wherein, to deposit the at least one TiCN layer, at least one Ti target is used as the Ti source for producing the TiCN layer, said target being sputtered in a reactive atmosphere by means of a HiPIMS process in a coating chamber, wherein, to reduce growth defects during the deposition of the at least one TiCN layer, the reactive atmosphere comprises one inert gas, preferably argon, and at least nitrogen gas as the reactive gas,;wherein, to reduce growth defects during deposition of the at least one TiCN layer,the reactive atmosphere additionally contains, as a second reactive gas, a gas containing carbon, preferable CH4, used as the source of carbon to produce the TiCN layer wherein, while depositing the TiCN layer, a bipolar bias voltage is applied to the substrate to be coated,orat least one graphite target is used as the source of carbon for producing the TiCN layer, said target being used for sputtering in the coating chamber using a HiPIMS process with the reactive atmosphere having only nitrogen gas as the reactive gas, wherein the Ti targets are preferably operated by means of a first power supply device or a first power supply unit and the graphite targets are operated with pulsed power by means of a second power supply device or a second power supply unit.