TiCN WITH REDUCED GROWTH DEFECTS WITH HiPIMS

摘要

The invention relates to a method for applying a coating having at least one TiCN layer to a surface of a substrate to be coated by means of HIPIMS, wherein, in order to deposit the at least one TiCN layer, at least one Ti target is used as a Ti source for the production of the TiCN layer, which Ti target is sputtered in a reactive atmosphere by means of a HIPIMS process in a coating chamber, wherein the reactive atmosphere comprises at least one noble gas, preferably argon, and at least one nitrogen gas as a reactive gas, wherein, in order to reduce growth defects during the deposition of the at least one TiCN layer, the reactive atmosphere additionally comprises a carbon-containing gas, preferably CH4, as a second reactive gas, which carbon-containing gas is used as a carbon source for the production of the TiCN layer, wherein a bipolar bias voltage is applied to the substrate to be coated during the deposition of the TiCN layer, or at least one graphite target is used as a carbon source for the production of the TiCN layer, which graphite target is sputtered by means of a HIPIMS process in the coating chamber with the reactive atmosphere having only nitrogen gas as a reactive gas, wherein the Ti targets are operated with pulsed power preferably by means of a first power supply device or a first power supply unit and the graphite targets are operated with pulsed power by means of a second power supply device or a second power supply unit.