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SYNAPSE ARRAY OF NEUROMORPHIC DEVICE INCLUDING SYNAPSES HAVING FERRO-ELECTRIC FIELD EFFECT TRANSISTORS AND OPERATION METHOD OF THE SAME
SYNAPSE ARRAY OF NEUROMORPHIC DEVICE INCLUDING SYNAPSES HAVING FERRO-ELECTRIC FIELD EFFECT TRANSISTORS AND OPERATION METHOD OF THE SAME
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机译:具有包含铁电场效应晶体管的突触的神经形态装置的突触阵列及其操作方法
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摘要
A synapse array of a neuromorphic device is provided. The synapse array may include a pre-synaptic neuron; a row line extending from the pre-synaptic neuron in a row direction; a post synaptic neuron; a column line extending from the post-synaptic neuron in a column direction; and a synapse disposed at an intersection region between the row line and the column line. The synapse may include an n-type ferroelectric field effect transistor (n-FeFET) having a source electrode, a gate electrode and a body; a p-type ferroelectric field effect transistor (p-FeFET) having a source electrode, a gate electrode and a body; and a resistive element having a first node electrically connected to the source electrode of the n-FeFET and electrically connected to the source electrode of the p-FeFET, and the n-FeFET and the p-FeFET are electrically connected in series.
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