首页> 外国专利> Synapse Array of a Neuromorphic Device Including a Synapse Array Having a Plurality of Ferro-electricity Field Effect Transistors

Synapse Array of a Neuromorphic Device Including a Synapse Array Having a Plurality of Ferro-electricity Field Effect Transistors

机译:神经形态装置的突触阵列,包括具有多个铁电场效应晶体管的突触阵列

摘要

Described is a synapse array of a neuromorphic device. According to an embodiment of the present invention, the synapse array of a neuromorphic device includes a first input neuron, a second input neuron, an output neuron, and a synapse. The synapse includes a plurality of ferroelectric field effect transistors connected in parallel with each other. Accordingly, the present invention can acquire high integration, low power consumption, and a multi-resistance level.
机译:描述了神经形态装置的突触阵列。根据本发明的实施例,神经形态设备的突触阵列包括第一输入神经元,第二输入神经元,输出神经元和突触。突触包括彼此并联连接的多个铁电场效应晶体管。因此,本发明可以获得高集成度,低功耗和多电阻水平。

著录项

  • 公开/公告号KR20180133073A

    专利类型

  • 公开/公告日2018-12-13

    原文格式PDF

  • 申请/专利权人 SK HYNIX INC.;

    申请/专利号KR20170069563

  • 发明设计人 LEE HYUNG DONG;

    申请日2017-06-05

  • 分类号G06N3/063;

  • 国家 KR

  • 入库时间 2022-08-21 11:52:16

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