SIC WAFER PRODUCTION METHOD, EPITAXIAL WAFER PRODUCTION METHOD, AND EPITAXIAL WAFER

摘要

This method for producing a SiC wafer (40) involves the following peripheral-face damage removal step performed on a SiC wafer (40) before the formation of an epitaxial layer (41). In the peripheral-face damage removal step, a face whereon the epitaxial layer (41) is to be formed is a main face, the opposite face is a reverse face, and the face connecting the main face and reverse face is a peripheral face, and at least the peripheral face of the SiC wafer (40) is heated under Si vapor pressure, thereby removing processing damage from the peripheral face.