Epitaxial growth of sic in a vertical multi-wafer cvd system: already suited as production process?

摘要

Results about a new CVD system suited for epitaxial growth on six 2 inch SiC-wafers at a time are presented. Excellent gas flow stability is achieved for this new reactor type as shown by in- situ observations of the gas flow dynamics in the reactor chamber. These experimental results agree favorably with numerical process simulation results.