首页> 外国专利> HALOGEN-PASSIVATED PEROVSKITE QUANTUM DOT, PREPARATION METHOD THEREFOR AND QLED DEVICE

HALOGEN-PASSIVATED PEROVSKITE QUANTUM DOT, PREPARATION METHOD THEREFOR AND QLED DEVICE

机译:卤化钝化钙钛矿量子点,制备方法及其QLED器件

摘要

A halogen-passivated perovskite quantum dot, a preparation method therefor, and a QLED device. The preparation method comprises steps of: adding a ligand having a deprotonating function into an inorganic perovskite quantum dot solution to carry out a ligand exchange reaction to obtain a first ligand-exchanged inorganic perovskite quantum dot solution (S10); and adding a polar organic halide into the first ligand-exchanged inorganic perovskite quantum dot solution to passivate the surfaces of inorganic perovskite quantum dots using halogen, and centrifuging to obtain halogen-passivated inorganic perovskite quantum dots (S20). The preparation method can effectively passivate the metal and non-metal elements on the surfaces of the inorganic perovskite quantum dots, thereby reducing the surface defects of the inorganic perovskite quantum dots, and thus improving the fluorescence intensity and charge transfer efficiency of the inorganic perovskite quantum dots.
机译:卤素钝化的钙钛矿量子点,其制备方法和QLED器件。该制备方法包括以下步骤:将具有去质子功能的配体加入无机钙钛矿量子点溶液中,进行配体交换反应,得到第一配体交换的无机钙钛矿量子点溶液(S10);将极性有机卤化物添加到第一配位体交换的无机钙钛矿量子点溶液中,以卤素使无机钙钛矿量子点的表面钝化,并离心分离得到卤素钝化的无机钙钛矿量子点(S20)。该制备方法可以有效地钝化无机钙钛矿量子点表面的金属和非金属元素,从而减少了无机钙钛矿量子点的表面缺陷,从而提高了无机钙钛矿量子点的荧光强度和电荷转移效率。点。

著录项

  • 公开/公告号WO2019010988A1

    专利类型

  • 公开/公告日2019-01-17

    原文格式PDF

  • 申请/专利权人 TCL CORPORATION;

    申请/专利号WO2018CN78494

  • 发明设计人 CHENG LULING;YANG YIXING;

    申请日2018-03-09

  • 分类号H01L51/56;

  • 国家 WO

  • 入库时间 2022-08-21 11:57:20

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