Electrical simulation of a QLED device based on quantum dots using the Transfer Hamiltonian approach

摘要

This work reports the numerical simulation approach of an experimental electroluminescent QLED based on CuInS2/ZnS quantum dots as active layer, using the Transfer Hamiltonian approach. For that purpose, a simulation tool has been developed in Matlab to calculate the current density J(mA cm^{−2) and the fundamental I-V curve of each segment device independently. That tool allows us to thoroughly study and identify the critical parameters conducting to the different electrical behavior observed in the experimental QLED device segments.}