PROCESSING METHOD FOR ETCHING AND CUTTING SAPPHIRE BY MEANS OF LASER-INDUCED KOH CHEMICAL REACTION

摘要

A processing method for etching and cutting sapphire by means of a laser-induced KOH chemical reaction mainly comprises the following four steps: (1) uniformly covering the surface of sapphire with a layer of KOH powder; (2) determining laser system parameters and process parameters of sapphire laser etching; (3) after a laser scanning path and a scanning speed are determined, allowing a laser beam to etch the sapphire according to the scanning path; and (4) if the sapphire is cut, splitting the sapphire along the groove etching direction; and if the sapphire is etched, omitting the step. In the method, two etching methods of fusion KOH corrosion of the sapphire and laser ablation of the sapphire are combined, and a complex two-dimensional etched groove can be etched on the surface of the sapphire; and because the etching mechanism of the method is that sapphire corrosion is mainly achieved by means of the chemical reaction, a high etching rate can be achieved in low crack damage, and high-quality linear cutting of a sapphire thin plate can also be achieved.