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Effect of KOH Concentration on the Properties of Undoped Porous GaN on Sapphire Substrate Prepared by UV assisted Electrochemical Etching

机译：KOH浓度对UV辅助电化学蚀刻制备的蓝宝石衬底上未掺杂多孔GaN的性能

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Azzafeerah Mahyuddin;
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年度 2020
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1. Characteristics of undoped porous GaN prepared by UV assisted electrochemical etching [J] . Optoelectronics and Advanced Materials-Rapid Communications . 2010,第2010期

机译：UV辅助电化学刻蚀制备的非掺杂多孔GaN的特性
2. Porous GaN prepared by UV assisted electrochemical etching [J] . F.K. Yam, Z. Hassan, S.S. Ng Thin Solid Films . 2007,第7a8期

机译：通过紫外线辅助电化学刻蚀制备的多孔GaN
3. Enhanced optical properties of porous GaN by using UV-assisted electrochemical etching [J] . Al-Heuseen K., Hashim M.R., Ali N.K. Physica, B. Condensed Matter . 2010,第15期

机译：通过使用紫外线辅助电化学蚀刻增强多孔GaN的光学性能
4. Enhanced Properties of Porous GaN Prepared by UV Assisted Electrochemical Etching [C] . AINORKHILAH Mahmood, NASER Mahmoud Ahmed, Zainuriah Hassan, International Conference on Nanomaterials, Synthesis and Characterization . 2012

机译：通过UV辅助电化学蚀刻制备的多孔GaN的增强性能
5. Control of Pore Characteristics of Porous Silicon Using Nontoxic Electrochemical Etching for Photovoltaics and Supercapacitor Applications [D] . Saha, Utpal 2017

机译：光伏和超级电容器应用无毒电化学刻蚀控制多孔硅的孔特性
6. Properties of GaN-based light-emitting diodes on patterned sapphire substrate coated with silver nanoparticles prepared by mask-free chemical etching [O] . Lung-Chien Chen, Wen-Fang Tsai 2013

机译：通过无掩模化学刻蚀制备的涂有银纳米颗粒的蓝宝石图案衬底上的GaN基发光二极管的性能
7. Properties of GaN-based light-emitting diodes on patterned sapphire substrate coated with silver nanoparticles prepared by mask-free chemical etching [O] . Lung-Chien Chen, Wen-Fang Tsai 2013

机译：通过无掩模化学刻蚀制备的涂有银纳米颗粒的蓝宝石图案衬底上的GaN基发光二极管的性能
8. UV-Photoassisted Etching of GaN in KOH; Journal of Electronic Materials [R] . Abernathy, C. R. , Auh, K. H. , Cho, H. , 1998

机译：在KOH中UV光辅助蚀刻GaN;电子材料学报

Effect of KOH Concentration on the Properties of Undoped Porous GaN on Sapphire Substrate Prepared by UV assisted Electrochemical Etching

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