GAN-BASED MICROWAVE POWER DEVICE WITH LARGE GATE WIDTH, AND MANUFACTURING METHOD THEREFOR

摘要

Provided are a GaN-based microwave power device with large gate width, and a manufacturing method therefor. The device comprises an AlGaN/GaN heterojunction epitaxial layer, a first dielectric layer covering the AlGaN/GaN heterojunction epitaxial layer, elongated source electrodes, a fishbone-shaped drain electrode, an annular gate electrode, a second dielectric layer for isolating upper and lower electrodes, and an interconnect metal electrode pad. The GaN-based microwave power device with large gate width prepared in the present invention realizes that phase shift of an input signal is small, the parasitic capacitance of the device is small, the signal gain is high, the power added efficiency is high and the output power is high. Moreover, the device has a simple manufacturing process, saves on chip area, has good repeatability and is applicable to fields such as high-frequency and high-power wireless communication and radar.