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GAN-BASED MICROWAVE POWER DEVICE WITH LARGE GATE WIDTH AND MANUFACTURING METHOD THEREOF
GAN-BASED MICROWAVE POWER DEVICE WITH LARGE GATE WIDTH AND MANUFACTURING METHOD THEREOF
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机译:门宽大的基于GAN的微波功率器件及其制造方法
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摘要
The present invention provides a GaN-based microwave power device with a large gate width and manufacturing method thereof. The device includes an AlGaN/GaN heterojunction epitaxial layer, a first dielectric layer overlying the AlGaN/GaN heterojunction epitaxial layer, a strip-like source electrode, a drain electrode distributed in a shape of a fishbone, an annular gate electrode, a second dielectric layer separating upper and lower electrodes, and an interconnect metal electrode pad. The GaN-based microwave power device with the large gate width prepared according to the present invention, has a small phase shift of the signals, a small parasitic capacitance of the device, a high signal gain, high power added efficiency and a high output power. At the same time, the manufacturing process of the device is simple, the chip area is saved, and the device has a good repeatability.
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