Highly perfluorinated positive-tone electron beam resist being capable of processing with fluorous solvent

摘要

The present invention relates to a highly perfluorinated positive-type electron beam resist capable of being processed with a high fluorine-based solvent. The highly perfluorinated positive-type electron beam resist capable of being processed with a high fluorine-based solvent according to the present invention, produces a high fluoride having sufficient solubility in a high fluorine-based solvent and free radicals during electron beam irradiation. Accordingly, an electron beam resist containing a monomer which is capable of undergoing a main chain cutting reaction is advantageous in that the preliminary process of electron beam lithography can be carried out only with a high fluorine-based solvent. Also, a positive pattern in the size of 100 nanometers is obtained under the electron beam irradiation, and thereby the positive-type electron beam resist having the excellent solubility to the high fluorine-based solvent can be used for the fabrication of an organic electronic device and a mask with multiple thin films.