Provided is a target material in which a problem of high resistance generated in an underlying film or cover film of a wiring thin film or an electrode thin film and a problem of a nodule due to surface roughness of the target material in sputtering are solved, and is capable of forming an MoNb thin film suitable for a flat image display device in which stable TFT characteristics are able to be obtained at low resistance. The present invention comprises: 5-30 atom% of Nb; and the remainder being composed of Mo and inevitable impurities, wherein a MoNb target material having an Nb phase with a maximum length exceeding 70 μm is less than 1.0 per 200000 μm^2 of a sputtering surface, and an average circle equivalent diameter of the Nb phase is preferably 15-65 μm.
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