It solves the problem of high resistance generated in the underlying film or cover film of the thin wiring or electrode film, and the problem of nodules caused by the surface roughness of the target material in sputtering, and provides a flat image display device with stable TFT characteristics at low resistance. It provides a target material capable of forming a suitable MoNb thin film. It is a MoNb target material containing less than 1.0 Nb phases containing 5 atomic% to 30 atomic% Nb, having a composition consisting of Mo and inevitable impurities in the balance, and having a maximum length exceeding 70 μm per 200000 μm 2 of the sputtering surface. , It is preferable that the average equivalent circle diameter of the Nb phase is 15 µm to 65 µm.
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