首页> 外国专利> Being production manner of the MoNb sputtering target material which

Being production manner of the MoNb sputtering target material which

机译:作为MoNb溅射靶材的制造方式,

摘要

PROBLEM TO BE SOLVED: To provide a method for producing an MoNb based sputtering target material where production of splashes upon sputtering film deposition is remarkably reduced.;SOLUTION: The method for producing an MoNb based sputtering target material having a composition comprising 0.5 to 50 atomic% Nb, and the balance Mo with inevitable impurities comprises: a stage where an Mo primary sintered compact obtained by sintering Mo raw material powder is produced; a stage where the Mo primary sintered compact is pulverized so as to produce Mo secondary powder; a stage where the Mo secondary power is heat-treated in a reducing atmosphere so as to produce reduction-treated Mo powder; and a stage where a powdery mixture obtained by mixing the reduction-treated Mo powder and Nb raw material powder is subjected to pressure-sintering so as to produce an MoNb sintered compact.;COPYRIGHT: (C)2009,JPO&INPIT
机译:解决的问题:提供一种制备MoNb基溅射靶材的方法,该方法显着减少了溅射膜沉积时飞溅的产生。解决方案:该方法用于制备具有0.5至50原子组成的MoNb基溅射靶材的方法。 %的Nb,余量的具有不可避免的杂质的Mo包括:阶段,该阶段是通过烧结Mo原料粉末而获得的Mo一次烧结体。将Mo一次烧结体粉碎而制成Mo二次粉末的阶段。在还原气氛中对Mo二次电力进行热处理,从而制造经还原处理的Mo粉末的阶段。将经过还原处理的钼粉和铌原料粉混合后得到的粉状混合物进行加压烧结,制成钼铌烧结体。(COP)RIGHT:(C)2009,JPO&INPIT

著录项

  • 公开/公告号JP4894008B2

    专利类型

  • 公开/公告日2012-03-07

    原文格式PDF

  • 申请/专利权人 日立金属株式会社;

    申请/专利号JP20070124701

  • 发明设计人 井上 惠介;斉藤 和也;

    申请日2007-05-09

  • 分类号C23C14/34;B22F3/15;B22F3/24;B22F9/04;C22C27/04;C22C1/04;

  • 国家 JP

  • 入库时间 2022-08-21 17:35:36

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号