MoNb薄膜直流磁控溅射制备及性能研究

摘要

The MoNb films were deposited by DC magnetron sputtering on soda-lime glass substrates using the Mo-10%Nb (10% was fraction of number of particles) target. The thickness, sheet resistance and surface morphology of the films were characterized, respectively, by using step profiler, four-probe method and atomic force microscope. The effects of sputtering power, gas pressure and substrate temperature on the properties and vegetative character of MoNb film were investigated. The results indicate that when the sputtering power increases twofold, the deposition rate increases 1.8 multiple, and the electrical resistivity decreases 2.3 multiple. The deposition rate and the electrical resistivity respectively increase 1.5 multiple and 13 multiple, respectively, when the technological gas pressure increases fourfold. When the substrate temperature is increased 135℃, the grain size and the surface roughness of MoNb film increase 0.567 nm and 3.36 nm, respectively.%以Mo-10%Nb(10%为粒子数分数)合金为靶材，采用直流磁控溅射法在钠钙玻璃基板上制备了MoNb薄膜。采用台阶仪、四探针电阻仪和AFM分别测试了MoNb薄膜的厚度、方块电阻及表面形貌。研究了功率密度、工艺气压及衬底温度对MoNb薄膜性能及其生长特性的影响。实验结果表明：功率密度增加2倍时，MoNb薄膜的沉积速率提升1.8倍，而电阻率降低2.3倍；工艺气压增大4倍时，MoNb薄膜的沉积速率提升1.5倍，其电阻率增大13倍。同时发现：衬底温度增加了135℃时，MoNb薄膜的表面粗糙度增加0.567 nm，颗粒大小增加3.36 nm。