OPC OPC OPCOptical Proximity Correction method and methods for manufacturing mask using the OPC method

摘要

The present invention provides an optical proximity correction (OPC) method capable of generating an OPC model with high accuracy, and a manufacturing method of a mask using the OPC method. The OPC method comprises the following steps of: preparing basic data for OPC; measuring an after development inspection (ADI) critical dimension (CD) of a photo resist (PR) pattern and an after cleaning inspection (ACI) CD of a wafer pattern formed by using the PR pattern, using a scanning electron microscope (SEM) for a sample, and generating CD data of the sample reflecting PR shrink by measurement of the SEM, by using the ADI CD of the PR pattern and the ACI CD of the wafer pattern; and generating an OPC model based on the basic data and the CD data of the sample.