OPC OPC OPCOptical Proximity Correction method and methods for manufacturing mask using the OPC method

摘要

The technical idea of the present invention provides an OPC method capable of generating an OPC model with high accuracy, and a mask manufacturing method using the OPC method. The OPC method includes the steps of preparing basic data for OPC (Optical Proximity Correction); With respect to the sample, ADI (After Development Inspection) CD (Critical Dimension) of a PR (Photo Resist) pattern and ACI (After Cleaning Inspection) CD of a wafer pattern formed using the PR pattern were measured with a Scanning Electron Microscope (SEM), generating CD data of the sample reflecting PR shrinkage by the SEM measurement by using the ADI CD of the PR pattern and the ACI CD of the wafer pattern; and generating an OPC model based on the basic data and the CD data of the sample.