Composition for cobalt plating comprising an additive for filling a voidless submicron feature

摘要

(a) a cobalt ion, and (b) an additive of formula (I) / RTI [Wherein, R ¹ is selected from XY; R ² is selected from R ¹ and R ³ ; X is a linear or branched C ₁ to C ₁₀ alkanediyl, straight or branched C ₂ to C ₁₀ alkenyl, linear or branched C ₂ to C ₁₀ alkynediyl, and (C ₂ H ₃ R ⁶ -O) _m -H; Y is selected from OR ³ , NR ³ R ⁴ , N ⁺ R ³ R ⁴ R ⁵ and NH- (C = O) -R ³ ; R ^3, R ^4, R ⁵ are, the same or different (i) H, (ii) C 5 to C ₂₀ aryl, (iii) C ₁ to C ₁₀ alkyl, (iv) C ₆ to C ₂₀ arylalkyl, (v) a C ₆ to C ₂₀ alkylaryl which may be substituted by OH, SO ₃ H, COOH or a combination thereof, and (vi) (C ₂ H ₃ R ⁶ -O) _n -H, R ³ and R ⁴ may together form a ring system, in which O or NR ⁷ may be interrupted; m, n is an integer independently selected from 1 to 30; R ⁶ is selected from H, and C ₁ to C ₅ alkyl; R ⁶ and R ⁷ is (II)].