- I/O GATE STACKS FOR STACK-FIN CHANNEL I/O DEVICES AND NANOWIRE CHANNEL CORE DEVICES

摘要

A semiconductor device comprises: a substrate; an I/O device over the substrate; and a core device over the substrate. The I/O device comprises a first gate structure having an interface layer, a first high-k dielectric stack on the interface layer, and a conductive layer directly above and in physical contact with the first high-k dielectric stack. The core device comprises a second gate structure having an interface layer, a second high-k dielectric stack on the interface layer, and a conductive layer directly above and in physical contact with the second high-k dielectric stack. The first high-k dielectric stack includes the second high-k dielectric stack and a third dielectric stack.