- I/O GATE STACKS FOR STACK-FIN CHANNEL I/O DEVICES AND NANOWIRE CHANNEL CORE DEVICES

摘要

The semiconductor device includes: a substrate; I/O devices on the substrate; And a core device on the substrate. The I/O device includes a first gate structure, the first gate structure comprising: an interfacial layer; A first high-k dielectric stack over the interfacial layer; And a conductive layer over the first high-k dielectric stack and in physical contact with the first high-k dielectric stack. The core device includes a second gate structure, the second gate structure comprising: an interfacial layer; A second high-k dielectric stack over the interfacial layer; And a conductive layer over the second high-k dielectric stack and in physical contact with the second high-k dielectric stack. The first high-k dielectric stack includes a second high-k dielectric stack and a third dielectric layer.